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TSM250NB06LDCR RLG

TSM250NB06LDCR RLG Taiwan Semiconductor Corporation

TSM250NB06LDCR_A2001.pdf Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 6A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.80 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TSM250NB06LDCR RLG Taiwan Semiconductor Corporation

Description: MOSFET 2N-CH 60V 6A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), 48W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 29A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 30V, Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (5x6), Part Status: Active.

Weitere Produktangebote TSM250NB06LDCR RLG nach Preis ab 0.78 EUR bis 1.99 EUR

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TSM250NB06LDCR RLG TSM250NB06LDCR RLG Hersteller : Taiwan Semiconductor Corporation TSM250NB06LDCR_A2001.pdf Description: MOSFET 2N-CH 60V 6A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
auf Bestellung 4774 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.97 EUR
11+1.61 EUR
100+1.23 EUR
500+0.98 EUR
1000+0.89 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
TSM250NB06LDCR RLG TSM250NB06LDCR RLG Hersteller : Taiwan Semiconductor TSM250NB06LDCR_A2001.pdf MOSFETs 60V, 29A, Dual N-Channel Power MOSFET
auf Bestellung 2031 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.99 EUR
10+1.62 EUR
100+1.27 EUR
500+1.07 EUR
1000+0.87 EUR
2500+0.82 EUR
5000+0.78 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TSM250NB06LDCR RLG TSM250NB06LDCR RLG Hersteller : Taiwan Semiconductor tsm250nb06ldcr_a2001.pdf Trans MOSFET N-CH 60V 29A 8-Pin PDFN EP T/R
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TSM250NB06LDCR RLG TSM250NB06LDCR RLG Hersteller : Taiwan Semiconductor tsm250nb06ldcr_a2001.pdf Trans MOSFET N-CH 60V 29A 8-Pin PDFN EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH