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TSM2N60SCW RPG

TSM2N60SCW RPG Taiwan Semiconductor

TSM2N60S_C15-1918797.pdf Hersteller: Taiwan Semiconductor
MOSFET 600V, 0.6A, Single N-Channel Power MOSFET
auf Bestellung 69 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.62 EUR
10+2.36 EUR
100+1.90 EUR
500+1.78 EUR
1000+1.56 EUR
2500+1.45 EUR
5000+1.40 EUR
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Technische Details TSM2N60SCW RPG Taiwan Semiconductor

Description: MOSFET N-CH 600V 600MA SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 600mA (Tc), Rds On (Max) @ Id, Vgs: 5Ohm @ 600mA, 10V, Power Dissipation (Max): 2.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-223, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 25 V.

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TSM2N60SCW RPG Hersteller : Taiwan Semiconductor Co., Ltd. TSM2N60S_C15.pdf Trans MOSFET N-CH 600V 0.6A T/R TSM2N60SCW RPG TTSM2n60scw
Anzahl je Verpackung: 5 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
25+1.14 EUR
Mindestbestellmenge: 25
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TSM2N60SCW RPG TSM2N60SCW RPG Hersteller : Taiwan Semiconductor tsm2n60s_c15.pdf Trans MOSFET N-CH 600V 0.6A 4-Pin(3+Tab) SOT-223 T/R
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TSM2N60SCW RPG TSM2N60SCW RPG Hersteller : Taiwan Semiconductor Corporation TSM2N60S_C15.pdf Description: MOSFET N-CH 600V 600MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 600mA, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TSM2N60SCW RPG TSM2N60SCW RPG Hersteller : Taiwan Semiconductor Corporation TSM2N60S_C15.pdf Description: MOSFET N-CH 600V 600MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 600mA, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH