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TSM300NB06CR RLG

TSM300NB06CR RLG Taiwan Semiconductor Corporation

TSM300NB06CR_B1804.pdf Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 6A/27A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 30 V
auf Bestellung 1841 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.60 EUR
10+2.34 EUR
100+1.82 EUR
500+1.50 EUR
1000+1.19 EUR
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Technische Details TSM300NB06CR RLG Taiwan Semiconductor Corporation

Description: MOSFET N-CH 60V 6A/27A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, Power Dissipation (Max): 3.1W (Ta), 56W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: 8-PDFN (5.2x5.75), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 30 V.

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TSM300NB06CR RLG TSM300NB06CR RLG Hersteller : Taiwan Semiconductor tsm300nb06cr_b1804.pdf Trans MOSFET N-CH 60V 27A 8-Pin PDFN EP T/R
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TSM300NB06CR RLG TSM300NB06CR RLG Hersteller : Taiwan Semiconductor Corporation TSM300NB06CR_B1804.pdf Description: MOSFET N-CH 60V 6A/27A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TSM300NB06CR RLG TSM300NB06CR RLG Hersteller : Taiwan Semiconductor TSM300NB06CR_B1804-1480654.pdf MOSFET 60V 27A 30mOhm N-Chan Pwr MOSFET
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Im Einkaufswagen  Stück im Wert von  UAH