TSM320N03CX RFG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 5.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.8W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 792 pF @ 15 V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.26 EUR |
| 6000+ | 0.24 EUR |
| 9000+ | 0.23 EUR |
| 15000+ | 0.21 EUR |
| 21000+ | 0.2 EUR |
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Technische Details TSM320N03CX RFG Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 5.5A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V, Power Dissipation (Max): 1.8W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 792 pF @ 15 V.
Weitere Produktangebote TSM320N03CX RFG nach Preis ab 0.25 EUR bis 7.09 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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TSM320N03CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 400mW; SOT23 Polarisation: unipolar Mounting: SMD Power dissipation: 0.4W Gate charge: 8.9nC Drain current: 4A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: tape Case: SOT23 On-state resistance: 32mΩ |
auf Bestellung 105 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM320N03CX RFG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 30V 5.5A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V Power Dissipation (Max): 1.8W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 792 pF @ 15 V |
auf Bestellung 42867 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM320N03CX RFG | Taiwan Semiconductor |
MOSFETs 30V, 5.5A, Single N-Channel Power MOSFET |
auf Bestellung 8061 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM320N03CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.3A Case: SOT23 Gate-source voltage: ±12V On-state resistance: 32mΩ Mounting: SMD Gate charge: 8.4nC Kind of package: tape Kind of channel: enhancement |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM320N03CX RFG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 400mW; SOT23
Polarisation: unipolar
Mounting: SMD
Power dissipation: 0.4W
Gate charge: 8.9nC
Drain current: 4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: tape
Case: SOT23
On-state resistance: 32mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 400mW; SOT23
Polarisation: unipolar
Mounting: SMD
Power dissipation: 0.4W
Gate charge: 8.9nC
Drain current: 4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: tape
Case: SOT23
On-state resistance: 32mΩ
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 90+ | 0.95 EUR |
| 105+ | 0.82 EUR |
| TSM320N03CX RFG |
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Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 5.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.8W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 792 pF @ 15 V
Description: MOSFET N-CHANNEL 30V 5.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.8W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 792 pF @ 15 V
auf Bestellung 42867 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 1.15 EUR |
| 30+ | 0.71 EUR |
| 100+ | 0.45 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.31 EUR |
| TSM320N03CX RFG |
|
Hersteller: Taiwan Semiconductor
MOSFETs 30V, 5.5A, Single N-Channel Power MOSFET
MOSFETs 30V, 5.5A, Single N-Channel Power MOSFET
auf Bestellung 8061 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.23 EUR |
| 10+ | 0.76 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.33 EUR |
| 3000+ | 0.27 EUR |
| 6000+ | 0.25 EUR |
| TSM320N03CX RFG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.3A
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 8.4nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.3A
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 8.4nC
Kind of package: tape
Kind of channel: enhancement
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 7.09 EUR |