TSM600NA25CIT C0G Taiwan Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.95 EUR |
| 10+ | 7.14 EUR |
| 50+ | 6.91 EUR |
| 100+ | 5.78 EUR |
| 250+ | 5.7 EUR |
| 500+ | 5.13 EUR |
| 1000+ | 4.4 EUR |
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Technische Details TSM600NA25CIT C0G Taiwan Semiconductor
Description: 250V 22A SINGLE N-CHAN, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 11A, 10V, Power Dissipation (Max): 78W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 250µA, Supplier Device Package: ITO-220TL, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3086 pF @ 125 V.
Weitere Produktangebote TSM600NA25CIT C0G nach Preis ab 4 EUR bis 10.22 EUR
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TSM600NA25CIT C0G | Taiwan Semiconductor Corporation |
 Description: 250V 22A SINGLE N-CHANPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 11A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 250µA Supplier Device Package: ITO-220TL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3086 pF @ 125 V |
auf Bestellung 3887 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM600NA25CIT C0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: 250V 22A SINGLE N-CHAN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 11A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Supplier Device Package: ITO-220TL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3086 pF @ 125 V
Description: 250V 22A SINGLE N-CHAN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 11A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Supplier Device Package: ITO-220TL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3086 pF @ 125 V
auf Bestellung 3887 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.22 EUR |
| 10+ | 7.12 EUR |
| 100+ | 5.7 EUR |
| 500+ | 4.95 EUR |
| 1000+ | 4 EUR |