TSM600NA25CIT C0G Taiwan Semiconductor
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.36 EUR |
| 10+ | 6.00 EUR |
| 50+ | 5.81 EUR |
| 100+ | 4.86 EUR |
| 250+ | 4.79 EUR |
| 500+ | 4.31 EUR |
| 1000+ | 3.70 EUR |
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Technische Details TSM600NA25CIT C0G Taiwan Semiconductor
Description: 250V 22A SINGLE N-CHAN, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 11A, 10V, Power Dissipation (Max): 78W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 250µA, Supplier Device Package: ITO-220TL, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3086 pF @ 125 V.
Weitere Produktangebote TSM600NA25CIT C0G nach Preis ab 3.36 EUR bis 8.59 EUR
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TSM600NA25CIT C0G | Hersteller : Taiwan Semiconductor Corporation |
 Description: 250V 22A SINGLE N-CHANPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 11A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 250µA Supplier Device Package: ITO-220TL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3086 pF @ 125 V |
auf Bestellung 3887 Stücke: Lieferzeit 10-14 Tag (e) |
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