
TSM600P03CS RLG Taiwan Semiconductor
auf Bestellung 3455 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
2539+ | 0.06 EUR |
2565+ | 0.06 EUR |
3301+ | 0.04 EUR |
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Technische Details TSM600P03CS RLG Taiwan Semiconductor
Description: MOSFET P-CHANNEL 30V 4.7A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V, Power Dissipation (Max): 2.1W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V.
Weitere Produktangebote TSM600P03CS RLG nach Preis ab 0.04 EUR bis 0.97 EUR
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TSM600P03CS RLG | Hersteller : Taiwan Semiconductor |
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auf Bestellung 3455 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM600P03CS RLG | Hersteller : Taiwan Semiconductor Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V Power Dissipation (Max): 2.1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V |
auf Bestellung 1355 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM600P03CS RLG | Hersteller : Taiwan Semiconductor |
![]() |
auf Bestellung 3770 Stücke: Lieferzeit 10-14 Tag (e) |
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![]() |
TSM600P03CS RLG | Hersteller : Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V Power Dissipation (Max): 2.1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V |
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