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TSM600P03CS RLG

TSM600P03CS RLG Taiwan Semiconductor

29634309745339tsm600p03cs_b1612.pdf Hersteller: Taiwan Semiconductor
Trans MOSFET P-CH 30V 4.7A 8-Pin SOP T/R
auf Bestellung 3455 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2539+0.062 EUR
2565+ 0.059 EUR
3301+ 0.044 EUR
Mindestbestellmenge: 2539
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Technische Details TSM600P03CS RLG Taiwan Semiconductor

Description: MOSFET P-CHANNEL 30V 4.7A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V, Power Dissipation (Max): 2.1W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V.

Weitere Produktangebote TSM600P03CS RLG nach Preis ab 0.037 EUR bis 0.97 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TSM600P03CS RLG TSM600P03CS RLG Hersteller : Taiwan Semiconductor 29634309745339tsm600p03cs_b1612.pdf Trans MOSFET P-CH 30V 4.7A 8-Pin SOP T/R
auf Bestellung 3455 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1563+0.1 EUR
1870+ 0.081 EUR
1891+ 0.077 EUR
1909+ 0.073 EUR
2539+ 0.053 EUR
2565+ 0.05 EUR
3301+ 0.037 EUR
Mindestbestellmenge: 1563
TSM600P03CS RLG TSM600P03CS RLG Hersteller : Taiwan Semiconductor Corporation TSM600P03CS_B1612.pdf Description: MOSFET P-CHANNEL 30V 4.7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
auf Bestellung 1355 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
28+ 0.63 EUR
100+ 0.44 EUR
500+ 0.34 EUR
1000+ 0.28 EUR
Mindestbestellmenge: 24
TSM600P03CS RLG TSM600P03CS RLG Hersteller : Taiwan Semiconductor TSM600P03CS_B1612.pdf MOSFET -30V, -4.7A, Single P-Channel Power MOSFET
auf Bestellung 3790 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
54+0.97 EUR
64+ 0.81 EUR
100+ 0.6 EUR
500+ 0.47 EUR
1000+ 0.38 EUR
2500+ 0.36 EUR
10000+ 0.32 EUR
Mindestbestellmenge: 54
TSM600P03CS RLG TSM600P03CS RLG Hersteller : Taiwan Semiconductor Corporation TSM600P03CS_B1612.pdf Description: MOSFET P-CHANNEL 30V 4.7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
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