TSM60NB099PW C1G Taiwan Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 13.69 EUR |
| 10+ | 11.74 EUR |
| 25+ | 10.65 EUR |
| 100+ | 9.79 EUR |
| 250+ | 9.2 EUR |
| 600+ | 8.62 EUR |
| 1200+ | 7.76 EUR |
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Technische Details TSM60NB099PW C1G Taiwan Semiconductor
Description: MOSFET N-CHANNEL 600V 38A TO247, Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 329W (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 11.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote TSM60NB099PW C1G nach Preis ab 9.4 EUR bis 15.58 EUR
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TSM60NB099PW C1G | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 38A TO247 Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 329W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 11.7A, 10V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 97 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TSM60NB099PW C1G |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 38A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 329W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 11.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CHANNEL 600V 38A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 329W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 11.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 97 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 15.58 EUR |
| 25+ | 9.4 EUR |