TSM60NB099PW C1G Taiwan Semiconductor
auf Bestellung 1830 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 13.69 EUR |
| 10+ | 11.74 EUR |
| 25+ | 10.65 EUR |
| 100+ | 9.79 EUR |
| 250+ | 9.2 EUR |
| 600+ | 8.62 EUR |
| 1200+ | 7.76 EUR |
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Technische Details TSM60NB099PW C1G Taiwan Semiconductor
Description: MOSFET N-CHANNEL 600V 38A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 11.7A, 10V, Power Dissipation (Max): 329W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V.
Weitere Produktangebote TSM60NB099PW C1G nach Preis ab 9.4 EUR bis 15.58 EUR
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TSM60NB099PW C1G | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 38A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 11.7A, 10V Power Dissipation (Max): 329W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V |
auf Bestellung 97 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM60NB099PW C1G | Hersteller : Taiwan Semiconductor |
 Trans MOSFET N-CH 600V 38A 3-Pin(3+Tab) TO-247 Tube |
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