TSM60NC196CM2 RNG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: 600V, 28A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AB (D2PAK)
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 152W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Technische Details TSM60NC196CM2 RNG Taiwan Semiconductor Corporation
Description: 600V, 28A, SINGLE N-CHANNEL POWE, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-263AB (D2PAK), Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 152W (Tc), Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB.
Weitere Produktangebote TSM60NC196CM2 RNG nach Preis ab 4.49 EUR bis 6.59 EUR
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TSM60NC196CM2 RNG | Taiwan Semiconductor Corporation |
Description: 600V, 28A, SINGLE N-CHANNEL POWE Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263AB (D2PAK) Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 152W (Tc) |
auf Bestellung 2397 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM60NC196CM2 RNG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 600V, 28A, SINGLE N-CHANNEL POWE
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AB (D2PAK)
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 152W (Tc)
Description: 600V, 28A, SINGLE N-CHANNEL POWE
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AB (D2PAK)
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 152W (Tc)
auf Bestellung 2397 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.59 EUR |
| 10+ | 5.55 EUR |
| 100+ | 4.49 EUR |