TSM60NC196CM2 RNG

TSM60NC196CM2 RNG Taiwan Semiconductor Corporation


TSM60NC196CM2_C2209.pdf Hersteller: Taiwan Semiconductor Corporation
Description: 600V, 28A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 152W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AB (D2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 300 V
auf Bestellung 1600 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+3.35 EUR
1600+2.87 EUR
Mindestbestellmenge: 800
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Technische Details TSM60NC196CM2 RNG Taiwan Semiconductor Corporation

Description: 600V, 28A, SINGLE N-CHANNEL POWE, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V, Power Dissipation (Max): 152W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-263AB (D2PAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 300 V.

Weitere Produktangebote TSM60NC196CM2 RNG nach Preis ab 3.77 EUR bis 5.54 EUR

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TSM60NC196CM2 RNG TSM60NC196CM2 RNG Hersteller : Taiwan Semiconductor Corporation TSM60NC196CM2_C2209.pdf Description: 600V, 28A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 152W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AB (D2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 300 V
auf Bestellung 2397 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.54 EUR
10+4.66 EUR
100+3.77 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TSM60NC196CM2 RNG TSM60NC196CM2 RNG Hersteller : Taiwan Semiconductor tsm60nc196cm2_b2204.pdf Trans MOSFET N-CH 600V 28A 3-Pin(2+Tab) D2PAK
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