TSM60NC390CI C0G Taiwan Semiconductor
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Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.56 EUR |
| 10+ | 1.78 EUR |
| 100+ | 1.74 EUR |
| 500+ | 1.73 EUR |
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Technische Details TSM60NC390CI C0G Taiwan Semiconductor
Description: 600V, 11A, SINGLE N-CHANNEL POWE, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V, Power Dissipation (Max): 78W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: ITO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 21.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 25 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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TSM60NC390CI C0G | Hersteller : Taiwan Semiconductor Corporation |
 Description: 600V, 11A, SINGLE N-CHANNEL POWEPackaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: ITO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 21.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 25 V |
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