TSM60NC620CI C0G Taiwan Semiconductor
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.13 EUR |
| 10+ | 2.6 EUR |
| 100+ | 2.08 EUR |
| 250+ | 1.92 EUR |
| 500+ | 1.74 EUR |
| 1000+ | 1.57 EUR |
| 2000+ | 1.36 EUR |
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Technische Details TSM60NC620CI C0G Taiwan Semiconductor
Description: 600V, 7A, SINGLE N-CHANNEL POWER, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V, Power Dissipation (Max): 46W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: ITO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 506 pF @ 300 V.
Weitere Produktangebote TSM60NC620CI C0G nach Preis ab 1.32 EUR bis 4.33 EUR
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TSM60NC620CI C0G | Hersteller : Taiwan Semiconductor Corporation |
 Description: 600V, 7A, SINGLE N-CHANNEL POWERPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: ITO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 506 pF @ 300 V |
auf Bestellung 3990 Stücke: Lieferzeit 10-14 Tag (e) |
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