TSM60NC980CH C5G Taiwan Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.57 EUR |
| 10+ | 2.12 EUR |
| 100+ | 1.65 EUR |
| 500+ | 1.4 EUR |
| 1000+ | 1.14 EUR |
| 2500+ | 1.07 EUR |
| 3750+ | 1.02 EUR |
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Technische Details TSM60NC980CH C5G Taiwan Semiconductor
Description: 600V, 4A, SINGLE N-CHANNEL POWER, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Packaging: Tube, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-251 (IPAK), Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 57W (Tc), Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA.
Weitere Produktangebote TSM60NC980CH C5G nach Preis ab 0.94 EUR bis 3.12 EUR
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TSM60NC980CH C5G | Taiwan Semiconductor Corporation |
 Description: 600V, 4A, SINGLE N-CHANNEL POWERInput Capacitance (Ciss) (Max) @ Vds: 330 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Packaging: Tube Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-251 (IPAK) Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
auf Bestellung 13114 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM60NC980CH C5G |
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Hersteller: Taiwan Semiconductor Corporation
Description: 600V, 4A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-251 (IPAK)
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Description: 600V, 4A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-251 (IPAK)
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
auf Bestellung 13114 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.12 EUR |
| 11+ | 1.99 EUR |
| 100+ | 1.34 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.98 EUR |
| 2000+ | 0.94 EUR |