TSM60NC980CH C5G Taiwan Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.57 EUR |
| 10+ | 2.12 EUR |
| 100+ | 1.65 EUR |
| 500+ | 1.4 EUR |
| 1000+ | 1.14 EUR |
| 2500+ | 1.07 EUR |
| 3750+ | 1.02 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details TSM60NC980CH C5G Taiwan Semiconductor
Description: 600V, 4A, SINGLE N-CHANNEL POWER, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V, Power Dissipation (Max): 57W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-251 (IPAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 300 V.
Weitere Produktangebote TSM60NC980CH C5G nach Preis ab 0.94 EUR bis 3.12 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TSM60NC980CH C5G | Taiwan Semiconductor Corporation |
 Description: 600V, 4A, SINGLE N-CHANNEL POWERPackaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-251 (IPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 300 V |
auf Bestellung 13114 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TSM60NC980CH C5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 600V, 4A, SINGLE N-CHANNEL POWER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 300 V
Description: 600V, 4A, SINGLE N-CHANNEL POWER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 300 V
auf Bestellung 13114 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.12 EUR |
| 11+ | 1.99 EUR |
| 100+ | 1.34 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.98 EUR |
| 2000+ | 0.94 EUR |