TSM60NE048PW C0G Taiwan Semiconductor Corporation

Description: MOSFET, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 61A (Tc), Rds On (Max) @ Id, Vgs: 44mOhm @ 20A, 12V, Power Dissipation (Max): 431W (Tc), Vgs(th) (Max) @ Id: 6V @ 4.6mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 10V, 12V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5023 pF @ 300 V.