Produkte > TAIWAN SEMICONDUCTOR CORPORATION > TSM60NE110CIT C0G
TSM60NE110CIT C0G

TSM60NE110CIT C0G Taiwan Semiconductor Corporation

TSM60NE110CIT_A2403.pdf Hersteller: Taiwan Semiconductor Corporation
Description: 600V, 17A, SINGLE N-CHANNEL HIGH
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.6A, 12V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2.5mA
Supplier Device Package: ITO-220TL
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 300 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.47 EUR
10+ 8.98 EUR
100+ 7.48 EUR
500+ 6.6 EUR
1000+ 5.94 EUR
2000+ 5.57 EUR
Mindestbestellmenge: 2
Produktrezensionen
Produktbewertung abgeben

Technische Details TSM60NE110CIT C0G Taiwan Semiconductor Corporation

Description: 600V, 17A, SINGLE N-CHANNEL HIGH, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 5.6A, 12V, Power Dissipation (Max): 73W (Tc), Vgs(th) (Max) @ Id: 6V @ 2.5mA, Supplier Device Package: ITO-220TL, Drive Voltage (Max Rds On, Min Rds On): 10V, 12V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 300 V.

Weitere Produktangebote TSM60NE110CIT C0G

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TSM60NE110CIT C0G TSM60NE110CIT C0G Hersteller : Taiwan Semiconductor TSM60NE110CIT_A2403.pdf MOSFET 600V, 17A, Single N-Channel High Voltage MOSFETs
Produkt ist nicht verfügbar