TSM60NE180CIT C0G Taiwan Semiconductor
auf Bestellung 1988 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.98 EUR |
| 10+ | 4.47 EUR |
| 25+ | 4.29 EUR |
| 100+ | 3.98 EUR |
| 250+ | 3.89 EUR |
| 2000+ | 3.29 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TSM60NE180CIT C0G Taiwan Semiconductor
Description: 600V, 13A, SINGLE N-CHANNEL HIGH, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 165mOhm @ 4.3A, 12V, Power Dissipation (Max): 63W (Tc), Vgs(th) (Max) @ Id: 6V @ 1.8mA, Supplier Device Package: ITO-220TL, Drive Voltage (Max Rds On, Min Rds On): 10V, 12V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 300 V.
Weitere Produktangebote TSM60NE180CIT C0G nach Preis ab 3.61 EUR bis 6.12 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TSM60NE180CIT C0G | Hersteller : Taiwan Semiconductor Corporation |
 Description: 600V, 13A, SINGLE N-CHANNEL HIGHPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 4.3A, 12V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 6V @ 1.8mA Supplier Device Package: ITO-220TL Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 300 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
| TSM60NE180CIT C0G | Hersteller : TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 63W; ITO220AB Drain-source voltage: 600V Drain current: 13A On-state resistance: 0.18Ω Type of transistor: N-MOSFET Power dissipation: 63W Polarisation: unipolar Kind of package: tube Gate charge: 34nC Kind of channel: enhancement Gate-source voltage: ±30V Mounting: THT Case: ITO220AB |
Produkt ist nicht verfügbar |