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TSM6502CR RLG

TSM6502CR RLG Taiwan Semiconductor Corporation

TSM6502CR_A1701.pdf Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N/P-CH 60V 24A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.71 EUR
5000+0.67 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TSM6502CR RLG Taiwan Semiconductor Corporation

Description: MOSFET N/P-CH 60V 24A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 40W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V, Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (5x6).

Weitere Produktangebote TSM6502CR RLG nach Preis ab 0.66 EUR bis 2.64 EUR

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TSM6502CR RLG TSM6502CR RLG Hersteller : Taiwan Semiconductor TSM6502CR_A1701.pdf MOSFETs 60V, 24A, -60V, -18A, Complementary N & P-Channel Power MOSFET
auf Bestellung 5538 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.08 EUR
10+1.60 EUR
100+1.41 EUR
500+0.98 EUR
1000+0.79 EUR
2500+0.73 EUR
5000+0.66 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TSM6502CR RLG TSM6502CR RLG Hersteller : Taiwan Semiconductor Corporation TSM6502CR_A1701.pdf Description: MOSFET N/P-CH 60V 24A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
auf Bestellung 7038 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.64 EUR
11+1.67 EUR
100+1.14 EUR
500+0.94 EUR
1000+0.80 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
TSM6502CR RLG TSM6502CR RLG Hersteller : Taiwan Semiconductor 11173220635012840tsm6502cr_a1701.pdf Trans MOSFET N/P-CH 60V 5.4A/4A 8-Pin PDFN EP T/R
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