TSM6502CR RLG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N/P-CH 60V 24A 8PDFN
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 40W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details TSM6502CR RLG Taiwan Semiconductor Corporation
Description: MOSFET N/P-CH 60V 24A 8PDFN, Supplier Device Package: 8-PDFN (5x6), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V, Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc), Drain to Source Voltage (Vdss): 60V, Power - Max: 40W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote TSM6502CR RLG nach Preis ab 0.65 EUR bis 2.64 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TSM6502CR RLG | Taiwan Semiconductor |
MOSFETs 60V, 24A, -60V, -18A, Complementary N & P-Channel Power MOSFET |
auf Bestellung 5006 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
TSM6502CR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N/P-CH 60V 24A 8PDFN Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Supplier Device Package: 8-PDFN (5x6) Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 40W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
auf Bestellung 7038 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TSM6502CR RLG |
|
Hersteller: Taiwan Semiconductor
MOSFETs 60V, 24A, -60V, -18A, Complementary N & P-Channel Power MOSFET
MOSFETs 60V, 24A, -60V, -18A, Complementary N & P-Channel Power MOSFET
auf Bestellung 5006 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.53 EUR |
| 10+ | 1.62 EUR |
| 100+ | 1.08 EUR |
| 500+ | 0.84 EUR |
| 1000+ | 0.77 EUR |
| 2500+ | 0.7 EUR |
| 5000+ | 0.65 EUR |
| TSM6502CR RLG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N/P-CH 60V 24A 8PDFN
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 40W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET N/P-CH 60V 24A 8PDFN
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 40W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 7038 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.64 EUR |
| 11+ | 1.67 EUR |
| 100+ | 1.14 EUR |
| 500+ | 0.94 EUR |
| 1000+ | 0.8 EUR |