TSM650N15CR RLG Taiwan Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 9.22 EUR |
| 10+ | 8.29 EUR |
| 25+ | 7.83 EUR |
| 100+ | 6.79 EUR |
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Technische Details TSM650N15CR RLG Taiwan Semiconductor
Description: MOSFET N-CH 150V 24A 8PDFN, Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: 8-PDFN (5x6), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 96W (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote TSM650N15CR RLG
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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TSM650N15CR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 150V 24A 8PDFN Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-PDFN (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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TSM650N15CR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 150V 24A 8PDFN Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-PDFN (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 150 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TSM650N15CR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 150V 24A 8PDFN
Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 150V 24A 8PDFN
Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSM650N15CR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 150V 24A 8PDFN
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Description: MOSFET N-CH 150V 24A 8PDFN
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH