TSM650N15CS RLG Taiwan Semiconductor
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Technische Details TSM650N15CS RLG Taiwan Semiconductor
Description: MOSFET N-CHANNEL 150V 9A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V, Power Dissipation (Max): 12.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SOP, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 75 V.
Weitere Produktangebote TSM650N15CS RLG
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TSM650N15CS RLG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 150V 9A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Power Dissipation (Max): 12.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 75 V |
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TSM650N15CS RLG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 150V 9A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Power Dissipation (Max): 12.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 75 V |
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TSM650N15CS RLG | Hersteller : Taiwan Semiconductor |
 MOSFET 150V, 9A, Single N-Channel Power MOSFET |
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TSM650N15CS RLG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 4A; 2.5W; SOP8 Drain-source voltage: 150V Drain current: 4A On-state resistance: 65mΩ Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: tape Gate charge: 37nC Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: SOP8 |
Produkt ist nicht verfügbar |