TSM650P03CX RFG

TSM650P03CX RFG Taiwan Semiconductor Corporation


TSM650P03CX_B1811.pdf Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 30V 4.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 15 V
auf Bestellung 12000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.20 EUR
6000+0.18 EUR
Mindestbestellmenge: 3000
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Technische Details TSM650P03CX RFG Taiwan Semiconductor Corporation

Description: MOSFET P-CHANNEL 30V 4.1A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V, Power Dissipation (Max): 1.56W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 15 V.

Weitere Produktangebote TSM650P03CX RFG nach Preis ab 0.17 EUR bis 0.97 EUR

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TSM650P03CX RFG TSM650P03CX RFG Hersteller : Taiwan Semiconductor TSM650P03CX_B1811.pdf MOSFETs -30V, -4.1A, Single P-Channel Power MOSFET
auf Bestellung 10606 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+0.95 EUR
10+0.59 EUR
100+0.38 EUR
1000+0.29 EUR
3000+0.20 EUR
9000+0.17 EUR
Mindestbestellmenge: 3
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TSM650P03CX RFG TSM650P03CX RFG Hersteller : TAIWAN SEMICONDUCTOR TSM650P03CX_B1811.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.6A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.6A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: tape
Kind of channel: enhancement
auf Bestellung 112 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
75+0.96 EUR
112+0.64 EUR
Mindestbestellmenge: 75
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TSM650P03CX RFG TSM650P03CX RFG Hersteller : Taiwan Semiconductor Corporation TSM650P03CX_B1811.pdf Description: MOSFET P-CHANNEL 30V 4.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 15 V
auf Bestellung 16624 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.97 EUR
30+0.60 EUR
100+0.39 EUR
500+0.29 EUR
1000+0.26 EUR
Mindestbestellmenge: 19
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TSM650P03CX RFG TSM650P03CX RFG Hersteller : Taiwan Semiconductor tsm650p03cx_b1811.pdf Trans MOSFET P-CH 30V 4.1A 3-Pin SOT-23 T/R
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