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TSM650P03CX TAI-SEM

Hersteller: TAI-SEM
Transistor P-Channel MOSFET; 30V; 12V; 100mOhm; 4,1A; 1,56W; -55°C ~ 150°C; TSM650P03CX RFG TSM650P03CX TTSM650p03cx
Anzahl je Verpackung: 100 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
200+0.28 EUR
Mindestbestellmenge: 200
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Technische Details TSM650P03CX TAI-SEM

Description: -30V, -4.1A, SINGLE P-CHANNEL PO, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V, Power Dissipation (Max): 1.56W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 15 V.

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TSM650P03CX TSM650P03CX Hersteller : Taiwan Semiconductor Corporation Description: -30V, -4.1A, SINGLE P-CHANNEL PO
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 15 V
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