TSM7P06CP ROG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor CorporationDescription: MOSFET P-CHANNEL 60V 7A TO252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 3A, 10V
Power Dissipation (Max): 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.52 EUR |
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Technische Details TSM7P06CP ROG Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 60V 7A TO252, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 3A, 10V, Power Dissipation (Max): 15.6W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 30 V.
Weitere Produktangebote TSM7P06CP ROG nach Preis ab 0.48 EUR bis 1.38 EUR
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TSM7P06CP ROG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET P-CHANNEL 60V 7A TO252 Packaging: Cut Tape (CT) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 3A, 10V Power Dissipation (Max): 15.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 30 V |
auf Bestellung 4183 Stücke: Lieferzeit 21-28 Tag (e) |
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TSM7P06CP ROG | Hersteller : Taiwan Semiconductor |
MOSFET -60V, -7A, Single P-Channel Power MOSFET |
auf Bestellung 870 Stücke: Lieferzeit 14-28 Tag (e) |
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TSM7P06CP ROG | Hersteller : Taiwan Semiconductor |
Trans MOSFET P-CH 60V 7A 3-Pin(2+Tab) DPAK T/R |
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TSM7P06CP ROG | Hersteller : Taiwan Semiconductor |
Trans MOSFET P-CH 60V 7A 3-Pin(2+Tab) DPAK T/R |
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TSM7P06CP ROG | Hersteller : Taiwan Semiconductor |
Trans MOSFET P-CH 60V 7A 3-Pin(2+Tab) DPAK T/R |
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| TSM7P06CP ROG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -4.4A; 15.6W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -4.4A Power dissipation: 15.6W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 8.2nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| TSM7P06CP ROG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -4.4A; 15.6W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -4.4A Power dissipation: 15.6W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 8.2nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |