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TSM900N06CP ROG

TSM900N06CP ROG Taiwan Semiconductor Corporation

TSM900N06CP_A2205.pdf Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 11A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.37 EUR
Mindestbestellmenge: 2500
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Technische Details TSM900N06CP ROG Taiwan Semiconductor Corporation

Description: MOSFET N-CHANNEL 60V 11A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 6A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V.

Weitere Produktangebote TSM900N06CP ROG nach Preis ab 0.34 EUR bis 1.21 EUR

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TSM900N06CP ROG TSM900N06CP ROG Hersteller : Taiwan Semiconductor TSM900N06CP_A2205.pdf MOSFETs 60V, 11A, Single N-Channel Power MOSFET
auf Bestellung 3850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.10 EUR
10+0.91 EUR
100+0.61 EUR
500+0.51 EUR
1000+0.46 EUR
2500+0.41 EUR
5000+0.34 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TSM900N06CP ROG TSM900N06CP ROG Hersteller : Taiwan Semiconductor Corporation TSM900N06CP_A2205.pdf Description: MOSFET N-CHANNEL 60V 11A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
auf Bestellung 5170 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.21 EUR
21+0.86 EUR
100+0.59 EUR
500+0.49 EUR
1000+0.44 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
TSM900N06CP ROG TSM900N06CP ROG Hersteller : Taiwan Semiconductor 875697097142606tsm900n06_c1612.pdf Trans MOSFET N-CH 60V 11A 3-Pin(2+Tab) DPAK T/R
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