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TSM900N06CW RPG
TSM900N06CW RPG
TSM900N06CW RPGTSM900N06CW RPG

TSM900N06CW RPG TAIWAN SEMICONDUCTOR

TSM900N06CW_A2205.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 4.17W; SOT223
Case: SOT223
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Gate charge: 9.3nC
On-state resistance: 90mΩ
Power dissipation: 4.17W
Drain current: 7A
Gate-source voltage: ±20V
Drain-source voltage: 60V
auf Bestellung 231 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
114+0.63 EUR
164+0.44 EUR
182+0.39 EUR
Mindestbestellmenge: 114 Stücke
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Technische Details TSM900N06CW RPG TAIWAN SEMICONDUCTOR

Description: MOSFET N-CHANNEL 60V 6A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V, Power Dissipation (Max): 7.8W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-223, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 30 V.

Weitere Produktangebote TSM900N06CW RPG nach Preis ab 0.19 EUR bis 1.35 EUR

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TSM900N06CW RPG TSM900N06CW RPG Taiwan Semiconductor Corporation TSM900N06CW_A2205.pdf Description: MOSFET N-CHANNEL 60V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Power Dissipation (Max): 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 30 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.25 EUR
5000+0.22 EUR
7500+0.21 EUR
12500+0.2 EUR
17500+0.19 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TSM900N06CW RPG TSM900N06CW RPG Taiwan Semiconductor Corporation TSM900N06CW_A2205.pdf Description: MOSFET N-CHANNEL 60V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Power Dissipation (Max): 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 30 V
auf Bestellung 20433 Stücke:
Lieferzeit 10-14 Tag (e)
18+1.02 EUR
28+0.64 EUR
100+0.41 EUR
500+0.31 EUR
1000+0.28 EUR
Mindestbestellmenge: 18 Stücke
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TSM900N06CW RPG TSM900N06CW RPG Taiwan Semiconductor TSM900N06CW_A2205.pdf MOSFETs 60V, 5A, Single N-Channel Power MOSFET
auf Bestellung 1038 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.35 EUR
10+0.84 EUR
100+0.54 EUR
500+0.41 EUR
1000+0.37 EUR
2500+0.27 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TSM900N06CW RPG Taiwan Semiconductor Co., Ltd. TSM900N06CW_A2205.pdf Transistor N-Channel MOSFET; 60V; 20V; 100mOhm; 11A; 4,17W; -55°C ~ 150°C; TSM900N06CW RPG TSM900N06CW TTSM900n06cw
Anzahl je Verpackung: 25 Stücke
auf Bestellung 75 Stücke:
Lieferzeit 7-14 Tag (e)
50+1.11 EUR
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TSM900N06CW RPG TSM900N06CW_A2205.pdf
TSM900N06CW RPG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Power Dissipation (Max): 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 30 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.25 EUR
5000+0.22 EUR
7500+0.21 EUR
12500+0.2 EUR
17500+0.19 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TSM900N06CW RPG TSM900N06CW_A2205.pdf
TSM900N06CW RPG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Power Dissipation (Max): 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 30 V
auf Bestellung 20433 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
18+1.02 EUR
28+0.64 EUR
100+0.41 EUR
500+0.31 EUR
1000+0.28 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TSM900N06CW RPG TSM900N06CW_A2205.pdf
TSM900N06CW RPG
Hersteller: Taiwan Semiconductor
MOSFETs 60V, 5A, Single N-Channel Power MOSFET
auf Bestellung 1038 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+1.35 EUR
10+0.84 EUR
100+0.54 EUR
500+0.41 EUR
1000+0.37 EUR
2500+0.27 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TSM900N06CW RPG TSM900N06CW_A2205.pdf
Hersteller: Taiwan Semiconductor Co., Ltd.
Transistor N-Channel MOSFET; 60V; 20V; 100mOhm; 11A; 4,17W; -55°C ~ 150°C; TSM900N06CW RPG TSM900N06CW TTSM900n06cw
Anzahl je Verpackung: 25 Stücke
auf Bestellung 75 Stücke:
Lieferzeit 7-14 Tag (e)
AnzahlPreis
50+1.11 EUR
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH