TSM900N06CW RPG TAIWAN SEMICONDUCTOR
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 4.17W; SOT223
On-state resistance: 90mΩ
Mounting: SMD
Power dissipation: 4.17W
Gate charge: 9.3nC
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tape
Case: SOT223
| Anzahl | Privatkunde |
|---|---|
| 114+ | 0.75 EUR |
| 164+ | 0.52 EUR |
| 182+ | 0.46 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TSM900N06CW RPG TAIWAN SEMICONDUCTOR
Description: MOSFET N-CHANNEL 60V 6A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V, Power Dissipation (Max): 7.8W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-223, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 30 V.
Weitere Produktangebote TSM900N06CW RPG nach Preis ab 0.19 EUR bis 1.87 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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TSM900N06CW RPG | Taiwan Semiconductor |
Trans MOSFET N-CH 60V 6A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM900N06CW RPG | Taiwan Semiconductor |
Trans MOSFET N-CH 60V 6A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM900N06CW RPG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 60V 6A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V Power Dissipation (Max): 7.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 30 V |
auf Bestellung 1220 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM900N06CW RPG | Taiwan Semiconductor |
MOSFETs 60V, 5A, Single N-Channel Power MOSFET |
auf Bestellung 4958 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM900N06CW RPG | Taiwan Semiconductor Co., Ltd. |
Transistor N-Channel MOSFET; 60V; 20V; 100mOhm; 11A; 4,17W; -55°C ~ 150°C; TSM900N06CW RPG TSM900N06CW TTSM900n06cw Anzahl je Verpackung: 25 Stücke |
auf Bestellung 65 Stücke: Lieferzeit 7-14 Tag (e) |
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| TSM900N06CW RPG |
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Hersteller: Taiwan Semiconductor
Trans MOSFET N-CH 60V 6A 4-Pin(3+Tab) SOT-223 T/R
Trans MOSFET N-CH 60V 6A 4-Pin(3+Tab) SOT-223 T/R
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.23 EUR |
| 10000+ | 0.2 EUR |
| 25000+ | 0.19 EUR |
| TSM900N06CW RPG |
|
Hersteller: Taiwan Semiconductor
Trans MOSFET N-CH 60V 6A 4-Pin(3+Tab) SOT-223 T/R
Trans MOSFET N-CH 60V 6A 4-Pin(3+Tab) SOT-223 T/R
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.23 EUR |
| 10000+ | 0.2 EUR |
| 25000+ | 0.19 EUR |
| TSM900N06CW RPG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Power Dissipation (Max): 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 30 V
Description: MOSFET N-CHANNEL 60V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Power Dissipation (Max): 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 30 V
auf Bestellung 1220 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 1.32 EUR |
| 26+ | 0.82 EUR |
| 100+ | 0.54 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.36 EUR |
| TSM900N06CW RPG |
|
Hersteller: Taiwan Semiconductor
MOSFETs 60V, 5A, Single N-Channel Power MOSFET
MOSFETs 60V, 5A, Single N-Channel Power MOSFET
auf Bestellung 4958 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.87 EUR |
| 10+ | 1.25 EUR |
| 100+ | 0.8 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.42 EUR |
| 2500+ | 0.32 EUR |
| TSM900N06CW RPG |
|
Hersteller: Taiwan Semiconductor Co., Ltd.
Transistor N-Channel MOSFET; 60V; 20V; 100mOhm; 11A; 4,17W; -55°C ~ 150°C; TSM900N06CW RPG TSM900N06CW TTSM900n06cw
Anzahl je Verpackung: 25 Stücke
Transistor N-Channel MOSFET; 60V; 20V; 100mOhm; 11A; 4,17W; -55°C ~ 150°C; TSM900N06CW RPG TSM900N06CW TTSM900n06cw
Anzahl je Verpackung: 25 Stücke
auf Bestellung 65 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 1.31 EUR |