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TSM950N10CW RPG

TSM950N10CW RPG Taiwan Semiconductor Corporation

TSM950N10_D1807.pdf Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 100V 6.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V
Power Dissipation (Max): 9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.41 EUR
Mindestbestellmenge: 2500
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Technische Details TSM950N10CW RPG Taiwan Semiconductor Corporation

Description: MOSFET N-CH 100V 6.5A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V, Power Dissipation (Max): 9W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-223, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V.

Weitere Produktangebote TSM950N10CW RPG nach Preis ab 0.36 EUR bis 1.34 EUR

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TSM950N10CW RPG TSM950N10CW RPG Hersteller : Taiwan Semiconductor TSM950N10_D1807.pdf MOSFETs 100V, 6.5A, Single N-Channel Power MOSFET
auf Bestellung 5709 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+0.98 EUR
10+0.88 EUR
100+0.60 EUR
500+0.50 EUR
1000+0.42 EUR
2500+0.39 EUR
5000+0.36 EUR
Mindestbestellmenge: 3
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TSM950N10CW RPG TSM950N10CW RPG Hersteller : Taiwan Semiconductor Corporation TSM950N10_D1807.pdf Description: MOSFET N-CH 100V 6.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V
Power Dissipation (Max): 9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
auf Bestellung 9154 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.34 EUR
19+0.95 EUR
100+0.69 EUR
500+0.55 EUR
1000+0.46 EUR
Mindestbestellmenge: 14
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TSM950N10CW RPG TSM950N10CW RPG Hersteller : Taiwan Semiconductor tsm950n10_d1807.pdf Trans MOSFET N-CH 100V 6.5A 4-Pin(3+Tab) SOT-223 T/R
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TSM950N10CW RPG Hersteller : TAIWAN SEMICONDUCTOR TSM950N10_D1807.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.1A; 9W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.1A
Power dissipation: 9W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: tape
Kind of channel: enhancement
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