auf Bestellung 2680 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 0.93 EUR |
| 10+ | 0.81 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.48 EUR |
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Technische Details TT8K11TCR ROHM Semiconductor
Description: MOSFET 2N-CH 30V 3A 8TSST, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3A, Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V, Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V, FET Feature: Logic Level Gate, 4V Drive, Vgs(th) (Max) @ Id: 2.5V @ 1A, Supplier Device Package: 8-TSST.
Weitere Produktangebote TT8K11TCR nach Preis ab 0.42 EUR bis 0.56 EUR
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| TT8K11TCR | Hersteller : Rohm Semiconductor |
 Trans MOSFET N-CH Si 30V 3A 8-Pin TSST T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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TT8K11TCR | Hersteller : Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 3A 8TSST Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3A Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V FET Feature: Logic Level Gate, 4V Drive Vgs(th) (Max) @ Id: 2.5V @ 1A Supplier Device Package: 8-TSST |
Produkt ist nicht verfügbar |
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TT8K11TCR | Hersteller : Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 3A 8TSST Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3A Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V FET Feature: Logic Level Gate, 4V Drive Vgs(th) (Max) @ Id: 2.5V @ 1A Supplier Device Package: 8-TSST |
Produkt ist nicht verfügbar |