| Anzahl | Privatkunde |
|---|---|
| 4+ | 1.05 EUR |
| 10+ | 0.88 EUR |
| 100+ | 0.64 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.39 EUR |
| 3000+ | 0.32 EUR |
| 9000+ | 0.3 EUR |
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Technische Details TT8K11TCR ROHM Semiconductor
Description: MOSFET 2N-CH 30V 3A 8TSST, Supplier Device Package: 8-TSST, Vgs(th) (Max) @ Id: 2.5V @ 1A, FET Feature: Logic Level Gate, 4V Drive, Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V, Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 3A, Drain to Source Voltage (Vdss): 30V, Power - Max: 1W, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote TT8K11TCR nach Preis ab 0.43 EUR bis 1.55 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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TT8K11TCR | Rohm Semiconductor |
 Description: MOSFET 2N-CH 30V 3A 8TSSTPackaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3A Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V FET Feature: Logic Level Gate, 4V Drive Vgs(th) (Max) @ Id: 2.5V @ 1A Supplier Device Package: 8-TSST |
auf Bestellung 2980 Stücke: Lieferzeit 10-14 Tag (e) |
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| TT8K11TCR | Rohm Semiconductor |
Trans MOSFET N-CH Si 30V 3A 8-Pin TSST T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| TT8K11TCR |
|
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 3A 8TSST
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V
Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.5V @ 1A
Supplier Device Package: 8-TSST
Description: MOSFET 2N-CH 30V 3A 8TSST
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V
Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.5V @ 1A
Supplier Device Package: 8-TSST
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.55 EUR |
| 22+ | 0.96 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.43 EUR |
| TT8K11TCR |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH Si 30V 3A 8-Pin TSST T/R
Trans MOSFET N-CH Si 30V 3A 8-Pin TSST T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 278+ | 0.63 EUR |
| 289+ | 0.6 EUR |
| 500+ | 0.56 EUR |
| 1000+ | 0.54 EUR |
| 2500+ | 0.51 EUR |