TT8M2TR Rohm Semiconductor
auf Bestellung 2840 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 192+ | 0.77 EUR |
| 500+ | 0.62 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TT8M2TR Rohm Semiconductor
Description: MOSFET N/P-CH 30V/20V 2.5A 8TSST, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.25W, Drain to Source Voltage (Vdss): 30V, 20V, Current - Continuous Drain (Id) @ 25°C: 2.5A, Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V, Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: 8-TSST.
Weitere Produktangebote TT8M2TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
|
TT8M2TR | Hersteller : Rohm Semiconductor |
 Trans MOSFET N/P-CH Si 30V/20V 2.5A 8-Pin TSST T/R |
auf Bestellung 49 Stücke: Lieferzeit 14-21 Tag (e) |
|
 |
TT8M2TR | Hersteller : Rohm Semiconductor |
Description: MOSFET N/P-CH 30V/20V 2.5A 8TSST Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 2.5A Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: 8-TSST |
Produkt ist nicht verfügbar |
|
 |
TT8M2TR | Hersteller : ROHM Semiconductor |
MOSFETs TRANS MOSFET N/PCH 30V/20V 2.5A 8PIN |
Produkt ist nicht verfügbar |