TT8M2TR

TT8M2TR Rohm Semiconductor


tt8m2tr-e.pdf Hersteller: Rohm Semiconductor
Trans MOSFET N/P-CH Si 30V/20V 2.5A 8-Pin TSST T/R
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Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
232+0.68 EUR
250+ 0.63 EUR
500+ 0.58 EUR
1000+ 0.54 EUR
2500+ 0.5 EUR
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Technische Details TT8M2TR Rohm Semiconductor

Description: MOSFET N/P-CH 30V/20V 2.5A 8TSST, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.25W, Drain to Source Voltage (Vdss): 30V, 20V, Current - Continuous Drain (Id) @ 25°C: 2.5A, Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V, Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: 8-TSST.

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TT8M2TR TT8M2TR Hersteller : Rohm Semiconductor TT8M2.pdf Description: MOSFET N/P-CH 30V/20V 2.5A 8TSST
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: 8-TSST
Produkt ist nicht verfügbar
TT8M2TR TT8M2TR Hersteller : ROHM Semiconductor ROHMS25729_1-2561119.pdf MOSFET TRANS MOSFET N/PCH 30V/20V 2.5A 8PIN
Produkt ist nicht verfügbar