TT8M3TR Rohm Semiconductor

Description: MOSFET N/P-CH 20V 2.5A 8TSST, Current - Continuous Drain (Id) @ 25°C: 2.5A, 2.4A, Drain to Source Voltage (Vdss): 20V, Power - Max: 1W, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR), Supplier Device Package: 8-TSST, Vgs(th) (Max) @ Id: 1V @ 1mA, FET Feature: Logic Level Gate, 1.5V Drive, Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V, Rds On (Max) @ Id, Vgs: 72mOhm @ 2.5A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V.