TTA0002(Q)
Produktcode: 174076
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Weitere Produktangebote TTA0002(Q) nach Preis ab 2.45 EUR bis 7.23 EUR
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TTA0002(Q) | TOSHIBA |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 160V; 18A; 180W; TO3PL Frequency: 30MHz Type of transistor: PNP Mounting: THT Case: TO3PL Collector current: 18A Current gain: 80...160 Collector-emitter voltage: 160V Power dissipation: 180W Polarisation: bipolar |
auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
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TTA0002(Q) | Toshiba |
Bipolar Transistors - BJT BJT PNP -18A 180W 80 HFE -2V Trans |
auf Bestellung 283 Stücke: Lieferzeit 10-14 Tag (e) |
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TTA0002(Q) | Toshiba Semiconductor and Storage |
Description: TRANS PNP 160V 18A TO-3P Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 2V @ 900mA, 9A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-3PL Packaging: Bulk Power - Max: 180 W Voltage - Collector Emitter Breakdown (Max): 160 V Current - Collector (Ic) (Max): 18 A Part Status: Active Supplier Device Package: TO-3P(L) Frequency - Transition: 30MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V |
auf Bestellung 204 Stücke: Lieferzeit 10-14 Tag (e) |
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| TTA0002(Q) |
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Hersteller: TOSHIBA
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 18A; 180W; TO3PL
Frequency: 30MHz
Type of transistor: PNP
Mounting: THT
Case: TO3PL
Collector current: 18A
Current gain: 80...160
Collector-emitter voltage: 160V
Power dissipation: 180W
Polarisation: bipolar
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 18A; 180W; TO3PL
Frequency: 30MHz
Type of transistor: PNP
Mounting: THT
Case: TO3PL
Collector current: 18A
Current gain: 80...160
Collector-emitter voltage: 160V
Power dissipation: 180W
Polarisation: bipolar
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 5.09 EUR |
| 26+ | 3.37 EUR |
| 100+ | 3.12 EUR |
| TTA0002(Q) |
|
Hersteller: Toshiba
Bipolar Transistors - BJT BJT PNP -18A 180W 80 HFE -2V Trans
Bipolar Transistors - BJT BJT PNP -18A 180W 80 HFE -2V Trans
auf Bestellung 283 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.48 EUR |
| 10+ | 5.59 EUR |
| 100+ | 3.94 EUR |
| 500+ | 3.25 EUR |
| 1000+ | 2.92 EUR |
| TTA0002(Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 160V 18A TO-3P
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 2V @ 900mA, 9A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-3PL
Packaging: Bulk
Power - Max: 180 W
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 18 A
Part Status: Active
Supplier Device Package: TO-3P(L)
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Description: TRANS PNP 160V 18A TO-3P
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 2V @ 900mA, 9A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-3PL
Packaging: Bulk
Power - Max: 180 W
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 18 A
Part Status: Active
Supplier Device Package: TO-3P(L)
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
auf Bestellung 204 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.6 EUR |
| 10+ | 5.68 EUR |
| 100+ | 4.01 EUR |