Produkte > TOSHIBA > TTC012(Q)
TTC012(Q)

TTC012(Q) Toshiba


TTC012_datasheet_en_20160122-1133743.pdf Hersteller: Toshiba
Bipolar Transistors - BJT NPN PWR Amp Trans 2A IC 3A ICP 800V
auf Bestellung 395 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.57 EUR
10+1.28 EUR
100+1.00 EUR
200+0.97 EUR
600+0.82 EUR
1000+0.69 EUR
2600+0.65 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details TTC012(Q) Toshiba

Description: TRANS NPN 375V 2A PW-MOLD2, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 62.5mA, 500mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 300mA, 5V, Supplier Device Package: PW-MOLD2, Part Status: Obsolete, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 375 V, Power - Max: 1.1 W.

Weitere Produktangebote TTC012(Q)

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
TTC012(Q) TTC012(Q) Hersteller : Toshiba Semiconductor and Storage TTC008_TTC012_Overview.pdf Description: TRANS NPN 375V 2A PW-MOLD2
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 62.5mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 300mA, 5V
Supplier Device Package: PW-MOLD2
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 375 V
Power - Max: 1.1 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH