TTD1409B,S4X Toshiba
| Anzahl | Preis |
|---|---|
| 1+ | 4.42 EUR |
| 10+ | 1.9 EUR |
| 100+ | 1.66 EUR |
| 500+ | 1.48 EUR |
| 1000+ | 1.38 EUR |
| 2500+ | 1.36 EUR |
| 5000+ | 1.27 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TTD1409B,S4X Toshiba
Description: TRANS NPN DARL 400V 6A TO-220SIS, Power - Max: 2 W, Voltage - Collector Emitter Breakdown (Max): 400 V, Current - Collector (Ic) (Max): 6 A, Part Status: Active, Supplier Device Package: TO-220SIS, DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 2A, 2V, Current - Collector Cutoff (Max): 20µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 2V @ 40mA, 4A, Operating Temperature: 150°C (TJ), Transistor Type: NPN - Darlington, Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote TTD1409B,S4X
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
TTD1409B,S4X | Hersteller : Toshiba Semiconductor and Storage |
 Description: TRANS NPN DARL 400V 6A TO-220SISPower - Max: 2 W Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector (Ic) (Max): 6 A Part Status: Active Supplier Device Package: TO-220SIS DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 2A, 2V Current - Collector Cutoff (Max): 20µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 2V @ 40mA, 4A Operating Temperature: 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |