TTD1409B,S4X Toshiba
auf Bestellung 5906 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.53 EUR |
| 10+ | 2.11 EUR |
| 100+ | 1.67 EUR |
| 250+ | 1.54 EUR |
| 500+ | 1.4 EUR |
| 1000+ | 1.2 EUR |
| 2500+ | 1.14 EUR |
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Technische Details TTD1409B,S4X Toshiba
Description: TRANS NPN DARL 400V 20UA TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2V @ 40mA, 4A, Current - Collector Cutoff (Max): 20µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 2A, 2V, Supplier Device Package: TO-220SIS, Part Status: Active, Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 400 V, Power - Max: 2 W.
Weitere Produktangebote TTD1409B,S4X nach Preis ab 2.5 EUR bis 2.5 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||
|---|---|---|---|---|---|---|---|---|---|
| TTD1409B,S4X | Hersteller : Toshiba Semiconductor and Storage |
 Description: TRANS NPN DARL 400V 20UA TO220Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 40mA, 4A Current - Collector Cutoff (Max): 20µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 2A, 2V Supplier Device Package: TO-220SIS Part Status: Active Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 2 W |
auf Bestellung 42 Stücke: Lieferzeit 10-14 Tag (e) |
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TTD1409B,S4X | Hersteller : Toshiba |
Trans Darlington NPN 400V 6A 2000mW 3-Pin(3+Tab) TO-220SIS Magazine |
Produkt ist nicht verfügbar |