
TTD1409B,S4X Toshiba
auf Bestellung 4037 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 3.78 EUR |
50+ | 1.34 EUR |
100+ | 1.24 EUR |
250+ | 1.19 EUR |
500+ | 1.17 EUR |
1000+ | 1.14 EUR |
2500+ | 1.13 EUR |
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Technische Details TTD1409B,S4X Toshiba
Description: TRANS NPN DARL 400V 6A TO-220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2V @ 40mA, 4A, Current - Collector Cutoff (Max): 20µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 2A, 2V, Supplier Device Package: TO-220SIS, Part Status: Active, Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 400 V, Power - Max: 2 W.
Weitere Produktangebote TTD1409B,S4X
Foto | Bezeichnung | Hersteller | Beschreibung |
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TTD1409B,S4X | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 40mA, 4A Current - Collector Cutoff (Max): 20µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 2A, 2V Supplier Device Package: TO-220SIS Part Status: Active Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 2 W |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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TTD1409B,S4X | Hersteller : Toshiba |
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Produkt ist nicht verfügbar |