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TW015N65C,S1F

TW015N65C,S1F Toshiba

TW015N65C_datasheet_en_20220615.pdf?did=143225&prodName=TW015N65C Hersteller: Toshiba
TW015N65C,S1F
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3+71.6 EUR
10+ 63.96 EUR
Mindestbestellmenge: 3
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Technische Details TW015N65C,S1F Toshiba

Description: G3 650V SIC-MOSFET TO-247 15MOH, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 18V, Power Dissipation (Max): 342W (Tc), Vgs(th) (Max) @ Id: 5V @ 11.7mA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 400 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400.

Weitere Produktangebote TW015N65C,S1F nach Preis ab 63.96 EUR bis 87.3 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TW015N65C,S1F TW015N65C,S1F Hersteller : Toshiba TW015N65C_datasheet_en_20220615.pdf?did=143225&prodName=TW015N65C TW015N65C,S1F
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3+71.6 EUR
10+ 63.96 EUR
Mindestbestellmenge: 3
TW015N65C,S1F TW015N65C,S1F Hersteller : Toshiba Semiconductor and Storage TW015N65C_datasheet_en_20220615.pdf?did=143225&prodName=TW015N65C Description: G3 650V SIC-MOSFET TO-247 15MOH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 18V
Power Dissipation (Max): 342W (Tc)
Vgs(th) (Max) @ Id: 5V @ 11.7mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
auf Bestellung 64 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+85.27 EUR
30+ 71.46 EUR
TW015N65C,S1F TW015N65C,S1F Hersteller : Toshiba Toshiba_TW015N65C_datasheet_en_20220615.pdf MOSFET G3 650V SiC-MOSFET TO-247 15mohm
auf Bestellung 69 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+87.3 EUR
10+ 82.09 EUR
120+ 80.48 EUR