TW015Z120C,S1F Toshiba Semiconductor and Storage

Description: G3 1200V SIC-MOSFET TO-247-4L 1, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 18V, Power Dissipation (Max): 431W (Tc), Vgs(th) (Max) @ Id: 5V @ 11.7mA, Supplier Device Package: TO-247-4L(X), Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 800 V.