TW027N65C,S1F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: G3 650V SIC-MOSFET TO-247 27MOH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 29A, 18V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 400 V
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 35.97 EUR |
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Technische Details TW027N65C,S1F Toshiba Semiconductor and Storage
Description: G3 650V SIC-MOSFET TO-247 27MOH, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), Rds On (Max) @ Id, Vgs: 37mOhm @ 29A, 18V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 5V @ 3mA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 400 V.
Weitere Produktangebote TW027N65C,S1F nach Preis ab 45.14 EUR bis 52.78 EUR
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TW027N65C,S1F | Hersteller : Toshiba |
MOSFET G3 650V SiC-MOSFET TO-247 27mohm |
auf Bestellung 147 Stücke: Lieferzeit 14-28 Tag (e) |
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