auf Bestellung 63 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 57.66 EUR |
| 10+ | 43.58 EUR |
| 120+ | 43.56 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TW030N120C,S1F Toshiba
Description: G3 1200V SIC-MOSFET TO-247 30MO, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 18V, Power Dissipation (Max): 249W (Tc), Vgs(th) (Max) @ Id: 5V @ 13mA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2925 pF @ 800 V.
Weitere Produktangebote TW030N120C,S1F nach Preis ab 58.94 EUR bis 58.94 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
 |
TW030N120C,S1F | Hersteller : Toshiba Semiconductor and Storage |
 Description: G3 1200V SIC-MOSFET TO-247 30MOPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 18V Power Dissipation (Max): 249W (Tc) Vgs(th) (Max) @ Id: 5V @ 13mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2925 pF @ 800 V |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
|