| Anzahl | Privatkunde |
|---|---|
| 30+ | 9.54 EUR |
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Technische Details TW030Z120C,S1F Toshiba
Description: G3 1200V SIC-MOSFET TO-247-4L 3, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Power Dissipation (Max): 249W (Tc), Vgs(th) (Max) @ Id: 5V @ 13mA, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2925 pF @ 800 V.
Weitere Produktangebote TW030Z120C,S1F nach Preis ab 9.54 EUR bis 22.24 EUR
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TW030Z120C,S1F | Toshiba |
 Trans MOSFET N-CH SiC 1.2KV 60A 4-Pin(4+Tab) TO-247 Tube |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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TW030Z120C,S1F | Toshiba |
SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 30mohm |
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TW030Z120C,S1F | Toshiba Semiconductor and Storage |
Description: G3 1200V SIC-MOSFET TO-247-4L 3 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Power Dissipation (Max): 249W (Tc) Vgs(th) (Max) @ Id: 5V @ 13mA Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2925 pF @ 800 V |
auf Bestellung 21 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TW030Z120C,S1F |
|
Hersteller: Toshiba
Trans MOSFET N-CH SiC 1.2KV 60A 4-Pin(4+Tab) TO-247 Tube
Trans MOSFET N-CH SiC 1.2KV 60A 4-Pin(4+Tab) TO-247 Tube
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 9.54 EUR |
| TW030Z120C,S1F |
|
Hersteller: Toshiba
SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 30mohm
SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 30mohm
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 19.39 EUR |
| 10+ | 14.54 EUR |
| TW030Z120C,S1F |
|
Hersteller: Toshiba Semiconductor and Storage
Description: G3 1200V SIC-MOSFET TO-247-4L 3
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Power Dissipation (Max): 249W (Tc)
Vgs(th) (Max) @ Id: 5V @ 13mA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2925 pF @ 800 V
Description: G3 1200V SIC-MOSFET TO-247-4L 3
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Power Dissipation (Max): 249W (Tc)
Vgs(th) (Max) @ Id: 5V @ 13mA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2925 pF @ 800 V
auf Bestellung 21 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 22.24 EUR |