Technische Details TW030Z120C,S1F Toshiba
Description: G3 1200V SIC-MOSFET TO-247-4L 3, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Power Dissipation (Max): 249W (Tc), Vgs(th) (Max) @ Id: 5V @ 13mA, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2925 pF @ 800 V.
Weitere Produktangebote TW030Z120C,S1F
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| TW030Z120C,S1F | Toshiba Semiconductor and Storage |
Description: G3 1200V SIC-MOSFET TO-247-4L 3 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Power Dissipation (Max): 249W (Tc) Vgs(th) (Max) @ Id: 5V @ 13mA Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2925 pF @ 800 V |
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Im Einkaufswagen Stück im Wert von UAH |
| TW030Z120C,S1F |
Hersteller: Toshiba Semiconductor and Storage
Description: G3 1200V SIC-MOSFET TO-247-4L 3
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Power Dissipation (Max): 249W (Tc)
Vgs(th) (Max) @ Id: 5V @ 13mA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2925 pF @ 800 V
Description: G3 1200V SIC-MOSFET TO-247-4L 3
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Power Dissipation (Max): 249W (Tc)
Vgs(th) (Max) @ Id: 5V @ 13mA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2925 pF @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH