TW045Z120C,S1F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: G3 1200V SIC-MOSFET TO-247-4L 4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 5V @ 6.7mA
Supplier Device Package: TO-247-4L(X)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 800 V
Rds On (Max) @ Id, Vgs: 62mOhm @ 20A, 18V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 37.54 EUR |
| 30+ | 23.87 EUR |
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Technische Details TW045Z120C,S1F Toshiba Semiconductor and Storage
Description: G3 1200V SIC-MOSFET TO-247-4L 4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Power Dissipation (Max): 182W (Tc), Vgs(th) (Max) @ Id: 5V @ 6.7mA, Supplier Device Package: TO-247-4L(X), Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 800 V, Rds On (Max) @ Id, Vgs: 62mOhm @ 20A, 18V.
Weitere Produktangebote TW045Z120C,S1F nach Preis ab 29.08 EUR bis 44 EUR
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TW045Z120C,S1F | Hersteller : Toshiba |
SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 45mohm |
auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) |
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