TW048Z65C,S1F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: G3 650V SIC-MOSFET TO-247-4L 48
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.6mA
Supplier Device Package: TO-247-4L(X)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1362 pF @ 400 V
Rds On (Max) @ Id, Vgs: 69mOhm @ 20A, 18V
auf Bestellung 243 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 26.03 EUR |
| 30+ | 16.04 EUR |
| 120+ | 14.24 EUR |
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Technische Details TW048Z65C,S1F Toshiba Semiconductor and Storage
Description: G3 650V SIC-MOSFET TO-247-4L 48, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Power Dissipation (Max): 132W (Tc), Vgs(th) (Max) @ Id: 5V @ 1.6mA, Supplier Device Package: TO-247-4L(X), Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1362 pF @ 400 V, Rds On (Max) @ Id, Vgs: 69mOhm @ 20A, 18V.
Weitere Produktangebote TW048Z65C,S1F nach Preis ab 17.93 EUR bis 28.42 EUR
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TW048Z65C,S1F | Hersteller : Toshiba |
SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 48mohm |
auf Bestellung 102 Stücke: Lieferzeit 10-14 Tag (e) |
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