auf Bestellung 21 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 43.08 EUR |
| 10+ | 37.96 EUR |
| 30+ | 36.92 EUR |
| 60+ | 34.87 EUR |
| 120+ | 32.81 EUR |
| 270+ | 31.77 EUR |
| 510+ | 29.74 EUR |
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Technische Details TW060Z120C,S1F Toshiba
Description: G3 1200V SIC-MOSFET TO-247-4L 6, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Power Dissipation (Max): 170W (Tc), Vgs(th) (Max) @ Id: 5V @ 4.2mA, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 800 V.
Weitere Produktangebote TW060Z120C,S1F
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| TW060Z120C,S1F | Hersteller : Toshiba Semiconductor and Storage |
Description: G3 1200V SIC-MOSFET TO-247-4L 6 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 5V @ 4.2mA Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 800 V |
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