auf Bestellung 1 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 26.44 EUR |
10+ | 22.93 EUR |
30+ | 19.47 EUR |
120+ | 19.08 EUR |
270+ | 18.72 EUR |
510+ | 18.33 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TW140N120C,S1F Toshiba
Description: G3 1200V SIC-MOSFET TO-247 140M, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 182mOhm @ 10A, 18V, Power Dissipation (Max): 107W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 691 pF @ 800 V.
Weitere Produktangebote TW140N120C,S1F
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
TW140N120C,S1F | Hersteller : Toshiba | TW140N120C,S1F |
Produkt ist nicht verfügbar |
||
TW140N120C,S1F | Hersteller : Toshiba Semiconductor and Storage |
Description: G3 1200V SIC-MOSFET TO-247 140M Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 182mOhm @ 10A, 18V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 691 pF @ 800 V |
Produkt ist nicht verfügbar |