UF3C120080B7S onsemi
Hersteller: onsemi
Description: SICFET N-CH 1200V 28.8A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.8A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 100 V
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Technische Details UF3C120080B7S onsemi
Description: SICFET N-CH 1200V 28.8A D2PAK-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Cascode SiCJFET), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28.8A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 6V @ 10mA, Supplier Device Package: D2PAK-7, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 100 V.
Weitere Produktangebote UF3C120080B7S nach Preis ab 18.27 EUR bis 31.77 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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UF3C120080B7S | Qorvo |
SiC MOSFETs 1200V/80mO,SICFET,G3,TO263-7 |
auf Bestellung 830 Stücke: Lieferzeit 10-14 Tag (e) |
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UF3C120080B7S | Qorvo / UnitedSiC |
MOSFET 1200V/80mOhm, SiC, FAST CASCODE, G3, TO-247-3L, REDUCED Rth |
auf Bestellung 1842 Stücke: Lieferzeit 10-14 Tag (e) |
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UF3C120080B7S | onsemi |
Description: SICFET N-CH 1200V 28.8A D2PAK-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28.8A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7 Vgs (Max): ±25V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 100 V |
auf Bestellung 3019 Stücke: Lieferzeit 10-14 Tag (e) |
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| UF3C120080B7S |
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Hersteller: Qorvo
SiC MOSFETs 1200V/80mO,SICFET,G3,TO263-7
SiC MOSFETs 1200V/80mO,SICFET,G3,TO263-7
auf Bestellung 830 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 27.25 EUR |
| 25+ | 23.69 EUR |
| 100+ | 20.42 EUR |
| 250+ | 18.83 EUR |
| 500+ | 18.27 EUR |
| UF3C120080B7S |
|
Hersteller: Qorvo / UnitedSiC
MOSFET 1200V/80mOhm, SiC, FAST CASCODE, G3, TO-247-3L, REDUCED Rth
MOSFET 1200V/80mOhm, SiC, FAST CASCODE, G3, TO-247-3L, REDUCED Rth
auf Bestellung 1842 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 29.85 EUR |
| 10+ | 27.44 EUR |
| 100+ | 23.18 EUR |
| 500+ | 20.69 EUR |
| 800+ | 20.31 EUR |
| UF3C120080B7S |
|
Hersteller: onsemi
Description: SICFET N-CH 1200V 28.8A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.8A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 100 V
Description: SICFET N-CH 1200V 28.8A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.8A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 100 V
auf Bestellung 3019 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 31.77 EUR |
| 10+ | 22.61 EUR |
| 100+ | 21.31 EUR |