UF3C120080B7S Qorvo
Hersteller: QorvoDescription: SICFET N-CH 1200V 28.8A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.8A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Part Status: Active
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 100 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 12.57 EUR |
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Technische Details UF3C120080B7S Qorvo
Description: SICFET N-CH 1200V 28.8A D2PAK-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Cascode SiCJFET), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28.8A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 6V @ 10mA, Supplier Device Package: D2PAK-7, Part Status: Active, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 100 V.
Weitere Produktangebote UF3C120080B7S nach Preis ab 12.57 EUR bis 25.08 EUR
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UF3C120080B7S | Hersteller : Qorvo |
Description: SICFET N-CH 1200V 28.8A D2PAK-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28.8A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7 Part Status: Active Vgs (Max): ±25V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 100 V |
auf Bestellung 4885 Stücke: Lieferzeit 10-14 Tag (e) |
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UF3C120080B7S | Hersteller : Qorvo |
MOSFET 1200V/80mO,SICFET,G3,TO263-7 |
auf Bestellung 1786 Stücke: Lieferzeit 10-14 Tag (e) |
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UF3C120080B7S | Hersteller : Qorvo / UnitedSiC |
MOSFET 1200V/80mOhm, SiC, FAST CASCODE, G3, TO-247-3L, REDUCED Rth |
auf Bestellung 1842 Stücke: Lieferzeit 10-14 Tag (e) |
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