UF3C120400B7S onsemi
Hersteller: onsemiDescription: SICFET N-CH 1200V 7.6A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 739 pF @ 800 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 6.33 EUR |
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Technische Details UF3C120400B7S onsemi
Description: SICFET N-CH 1200V 7.6A D2PAK-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Cascode SiCJFET), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc), Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 6V @ 10mA, Supplier Device Package: D2PAK-7, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 739 pF @ 800 V.
Weitere Produktangebote UF3C120400B7S nach Preis ab 5.9 EUR bis 13.06 EUR
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UF3C120400B7S | Hersteller : Qorvo |
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auf Bestellung 2220 Stücke: Lieferzeit 10-14 Tag (e) |
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UF3C120400B7S | Hersteller : onsemi |
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auf Bestellung 1980 Stücke: Lieferzeit 10-14 Tag (e) |
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UF3C120400B7S | Hersteller : onsemi |
Description: SICFET N-CH 1200V 7.6A D2PAK-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 739 pF @ 800 V |
auf Bestellung 964 Stücke: Lieferzeit 10-14 Tag (e) |
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UF3C120400B7S | Hersteller : QORVO |
Description: QORVO - UF3C120400B7S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 7.6 A, 1.2 kV, 410 mohm, D2PAK tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: Y-EX Dauer-Drainstrom Id: 7.6A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 100W Bauform - Transistor: D2PAK Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 410mohm SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 828 Stücke: Lieferzeit 14-21 Tag (e) |
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| UF3C120400B7S | Hersteller : United Silicon Carbide |
Switching Fast SiC FETs |
Produkt ist nicht verfügbar |