Produkte > QORVO > UF3C170400B7S
UF3C170400B7S

UF3C170400B7S Qorvo

da008948 Hersteller: Qorvo
Description: SICFET N-CH 1700V 7.6A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 734 pF @ 1200 V
auf Bestellung 6400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+7.69 EUR
1600+ 6.92 EUR
2400+ 6.48 EUR
Mindestbestellmenge: 800
Produktrezensionen
Produktbewertung abgeben

Technische Details UF3C170400B7S Qorvo

Description: SICFET N-CH 1700V 7.6A D2PAK-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Cascode SiCJFET), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc), Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 6V @ 10mA, Supplier Device Package: D2PAK-7, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 734 pF @ 1200 V.

Weitere Produktangebote UF3C170400B7S nach Preis ab 7.37 EUR bis 12.48 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
UF3C170400B7S UF3C170400B7S Hersteller : Qorvo da008948 Description: SICFET N-CH 1700V 7.6A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 734 pF @ 1200 V
auf Bestellung 6655 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+12.2 EUR
10+ 10.46 EUR
100+ 8.71 EUR
Mindestbestellmenge: 2
UF3C170400B7S UF3C170400B7S Hersteller : UnitedSiC DS_UF3C170400B7S-3108065.pdf MOSFET 1700V/400mOhm, SiC, FAST CASCODE, G3, D2PAK-7L, ENHANCED Rth
auf Bestellung 800 Stücke:
Lieferzeit 39-43 Tag (e)
Anzahl Preis ohne MwSt
1+12.48 EUR
10+ 11.28 EUR
100+ 9.33 EUR
500+ 8.13 EUR
1000+ 7.62 EUR
2500+ 7.37 EUR
UF3C170400B7S UF3C170400B7S Hersteller : Qorvo UF3C170400B7S_Data_Sheet-3177196.pdf MOSFET 1200V/400mO,SICFET,G3,TO263-7
Produkt ist nicht verfügbar