UF3SC065030B7S onsemi
Hersteller: onsemiDescription: 650V/30MOHM, SIC, STACKED FAST C
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 40A, 12V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 18.89 EUR |
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Technische Details UF3SC065030B7S onsemi
Description: 650V/30MOHM, SIC, STACKED FAST C, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: SiCFET (Cascode SiCJFET), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 40A, 12V, Power Dissipation (Max): 214W (Tc), Vgs(th) (Max) @ Id: 6V @ 10mA, Supplier Device Package: D2PAK-7, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V.
Weitere Produktangebote UF3SC065030B7S nach Preis ab 19.49 EUR bis 35.09 EUR
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UF3SC065030B7S | Hersteller : onsemi |
Description: 650V/30MOHM, SIC, STACKED FAST C Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 40A, 12V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
auf Bestellung 2624 Stücke: Lieferzeit 10-14 Tag (e) |
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UF3SC065030B7S | Hersteller : Qorvo |
SiC MOSFETs 650V/30mO,SICFET,G3,TO263-7 |
auf Bestellung 403 Stücke: Lieferzeit 10-14 Tag (e) |
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UF3SC065030B7S | Hersteller : Qorvo / UnitedSiC |
MOSFET 650V/30mOhm, SiC, FAST STACK CASCODE, G3, D2PAK-7L, REDUCED Rth |
auf Bestellung 1163 Stücke: Lieferzeit 10-14 Tag (e) |
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UF3SC065030B7S | Hersteller : QORVO |
Description: QORVO - UF3SC065030B7S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 62 A, 650 V, 27 mohm, D2PAK tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 62A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 214W Bauform - Transistor: D2PAK Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 27mohm SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 600 Stücke: Lieferzeit 14-21 Tag (e) |