UF3SC065040B7S Qorvo
Hersteller: Qorvo
Description: 650V/40MOHM, SIC, STACKED FAST C
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 12V
Part Status: Active
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 195W (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 12V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
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Technische Details UF3SC065040B7S Qorvo
Description: 650V/40MOHM, SIC, STACKED FAST C, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 12V, Part Status: Active, Supplier Device Package: D2PAK-7, Vgs(th) (Max) @ Id: 6V @ 10mA, Power Dissipation (Max): 195W (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 12V, Current - Continuous Drain (Id) @ 25°C: 43A (Tc), FET Type: N-Channel, Technology: SiCFET (Cascode SiCJFET), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).
Weitere Produktangebote UF3SC065040B7S nach Preis ab 15.93 EUR bis 41.71 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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UF3SC065040B7S | Qorvo |
Description: 650V/40MOHM, SIC, STACKED FAST C Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 12V Power Dissipation (Max): 195W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
auf Bestellung 8450 Stücke: Lieferzeit 10-14 Tag (e) |
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UF3SC065040B7S | Qorvo |
SiC MOSFETs 650V/40mO,SICFET,G3,TO263-7 |
auf Bestellung 859 Stücke: Lieferzeit 10-14 Tag (e) |
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UF3SC065040B7S | onsemi |
SiC MOSFETs 650V/40MOSICFETG3TO263 |
auf Bestellung 738 Stücke: Lieferzeit 10-14 Tag (e) |
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UF3SC065040B7S | ONSEMI |
Description: ONSEMI - UF3SC065040B7S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 43 A, 650 V, 42 mohm, D2PAK tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 43A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 195W Bauform - Transistor: D2PAK Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 42mohm SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 522 Stücke: Lieferzeit 14-21 Tag (e) |
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| UF3SC065040B7S |
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Hersteller: Qorvo
Description: 650V/40MOHM, SIC, STACKED FAST C
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 12V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: 650V/40MOHM, SIC, STACKED FAST C
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 12V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 8450 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.1 EUR |
| 25+ | 20.06 EUR |
| 100+ | 17.31 EUR |
| 250+ | 15.93 EUR |
| UF3SC065040B7S |
|
Hersteller: Qorvo
SiC MOSFETs 650V/40mO,SICFET,G3,TO263-7
SiC MOSFETs 650V/40mO,SICFET,G3,TO263-7
auf Bestellung 859 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 26.2 EUR |
| 25+ | 22.74 EUR |
| 100+ | 19.62 EUR |
| 250+ | 17.91 EUR |
| 800+ | 17.53 EUR |
| 2400+ | 17.47 EUR |
| 4800+ | 17.45 EUR |
| UF3SC065040B7S |
|
Hersteller: onsemi
SiC MOSFETs 650V/40MOSICFETG3TO263
SiC MOSFETs 650V/40MOSICFETG3TO263
auf Bestellung 738 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 33.59 EUR |
| 10+ | 23.87 EUR |
| 100+ | 20.9 EUR |
| 500+ | 20.55 EUR |
| 800+ | 19.5 EUR |
| UF3SC065040B7S |
|
Hersteller: ONSEMI
Description: ONSEMI - UF3SC065040B7S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 43 A, 650 V, 42 mohm, D2PAK
tariffCode: 85412900
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 43A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 6V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 195W
Bauform - Transistor: D2PAK
Anzahl der Pins: 7Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 12V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 42mohm
SVHC: No SVHC (17-Jan-2023)
Description: ONSEMI - UF3SC065040B7S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 43 A, 650 V, 42 mohm, D2PAK
tariffCode: 85412900
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 43A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 6V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 195W
Bauform - Transistor: D2PAK
Anzahl der Pins: 7Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 12V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 42mohm
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 522 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 41.71 EUR |
| 7+ | 33.53 EUR |
| 10+ | 26.16 EUR |
| 50+ | 25.04 EUR |
| 100+ | 23.91 EUR |
| 250+ | 23.43 EUR |