UF3SC065040D8S UnitedSiC
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Technische Details UF3SC065040D8S UnitedSiC
Description: SICFET N-CH 650V 18A 4DFN, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Cascode SiCJFET), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 58mOhm @ 20A, 12V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 6V @ 10mA, Supplier Device Package: 4-DFN (8x8), Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V.
Weitere Produktangebote UF3SC065040D8S
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| UF3SC065040D8S | Hersteller : United Silicon Carbide |
 Switching Fast SiC FETs |
Produkt ist nicht verfügbar |
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UF3SC065040D8S | Hersteller : Qorvo |
Description: SICFET N-CH 650V 18A 4DFN Packaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 20A, 12V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: 4-DFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
Produkt ist nicht verfügbar |