auf Bestellung 200 Stücke:
Lieferzeit 318-322 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 48.68 EUR |
| 25+ | 42.94 EUR |
| 100+ | 37.22 EUR |
| 200+ | 31.5 EUR |
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Technische Details UF4C120053B7SSR Qorvo
Description: 1200V/53MO,SICFET,G4,TO263-7, Packaging: Bulk, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tj), Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 12V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 6V @ 10mA, Supplier Device Package: D2PAK-7L, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 800 V.
Weitere Produktangebote UF4C120053B7SSR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| UF4C120053B7SSR | Hersteller : Qorvo |
Description: 1200V/53MO,SICFET,G4,TO263-7 Packaging: Bulk Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tj) Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 12V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7L Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 800 V |
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