auf Bestellung 544 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 37.24 EUR |
| 25+ | 32.35 EUR |
| 100+ | 27.93 EUR |
| 250+ | 25.71 EUR |
| 500+ | 24.94 EUR |
| 2400+ | 24.92 EUR |
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Technische Details UF4SC120023B7S Qorvo
Description: 1200V/23MO,SICFET,G4,TO263-7, Packaging: Bulk, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 72A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 12V, FET Feature: Depletion Mode, Power Dissipation (Max): 385W (Tc), Vgs(th) (Max) @ Id: 6V @ 10mA, Supplier Device Package: D2PAK-7L, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 800 V.
Weitere Produktangebote UF4SC120023B7S nach Preis ab 27.90 EUR bis 37.63 EUR
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UF4SC120023B7S | Hersteller : onsemi |
 SiC MOSFETs 1200V/23MOSICFETG4TO263-7 |
auf Bestellung 1099 Stücke: Lieferzeit 10-14 Tag (e) |
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UF4SC120023B7S | Hersteller : Qorvo |
Description: 1200V/23MO,SICFET,G4,TO263-7 Packaging: Bulk Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 12V FET Feature: Depletion Mode Power Dissipation (Max): 385W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7L Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 800 V |
Produkt ist nicht verfügbar |