UG3SC120009K4S onsemi
Hersteller: onsemiDescription: 1200V/9MO,SICFET,DG,G3,TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 12V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 320mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8157 pF @ 800 V
auf Bestellung 487 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 97.93 EUR |
| 10+ | 75.15 EUR |
| 100+ | 73.92 EUR |
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Technische Details UG3SC120009K4S onsemi
Description: 1200V/9MO,SICFET,DG,G3,TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 12V, Power Dissipation (Max): 789W (Tc), Vgs(th) (Max) @ Id: 4.7V @ 320mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 8157 pF @ 800 V.
Weitere Produktangebote UG3SC120009K4S nach Preis ab 82.86 EUR bis 112.04 EUR
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UG3SC120009K4S | Hersteller : onsemi |
JFETs 1200V/9MOSICFETDGG3TO247-4 |
auf Bestellung 629 Stücke: Lieferzeit 10-14 Tag (e) |
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