auf Bestellung 350 Stücke:
Lieferzeit 318-322 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 76.17 EUR |
| 25+ | 66.21 EUR |
| 100+ | 57.13 EUR |
| 250+ | 53.06 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details UG4SC075006K4S onsemi
Description: 750V/6MO,COMBO-FET,G4,TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 80A, 12V, Power Dissipation (Max): 714W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 180mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V.
Weitere Produktangebote UG4SC075006K4S
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
UG4SC075006K4S | Hersteller : onsemi |
 Description: 750V/6MO,COMBO-FET,G4,TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 80A, 12V Power Dissipation (Max): 714W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 180mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V |
Produkt ist nicht verfügbar |