UGB8DT-E3/81 Vishay General Semiconductor
auf Bestellung 104 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 17+ | 3.12 EUR |
| 100+ | 2.91 EUR |
| 500+ | 1.88 EUR |
| 800+ | 1.53 EUR |
| 2400+ | 1.44 EUR |
| 4800+ | 1.37 EUR |
| 9600+ | 1.32 EUR |
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Technische Details UGB8DT-E3/81 Vishay General Semiconductor
Description: DIODE GEN PURP 200V 8A TO263AB, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-263AB (D2PAK), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A, Current - Reverse Leakage @ Vr: 10 µA @ 200 V.
Weitere Produktangebote UGB8DT-E3/81
| Foto | Bezeichnung | Hersteller | Beschreibung |
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UGB8DT-E3/81 | Hersteller : Vishay |
 Rectifier Diode Switching 200V 8A 30ns 3-Pin(2+Tab) TO-263AB T/R |
Produkt ist nicht verfügbar |
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UGB8DT-E3/81 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 8A TO263AB Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
Produkt ist nicht verfügbar |