UGB8DT-E3/81 Vishay General Semiconductor
auf Bestellung 104 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.11 EUR |
| 100+ | 1.97 EUR |
| 500+ | 1.27 EUR |
| 800+ | 1.04 EUR |
| 2400+ | 0.98 EUR |
| 4800+ | 0.93 EUR |
| 9600+ | 0.89 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details UGB8DT-E3/81 Vishay General Semiconductor
Description: DIODE GEN PURP 200V 8A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-263AB (D2PAK), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A, Current - Reverse Leakage @ Vr: 10 µA @ 200 V.
Weitere Produktangebote UGB8DT-E3/81
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
UGB8DT-E3/81 | Hersteller : Vishay |
 Rectifier Diode Switching 200V 8A 30ns 3-Pin(2+Tab) TO-263AB T/R |
Produkt ist nicht verfügbar |
|
 |
UGB8DT-E3/81 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 8A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
Produkt ist nicht verfügbar |