UHB100SC12E1BC3N onsemi
Hersteller: onsemiDescription: MOSFET 2P-CH 1200V 100A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 P-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 417W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5859pF @ 800V
Rds On (Max) @ Id, Vgs: 12mOhm @ 70A, 12V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 15V
Vgs(th) (Max) @ Id: 6V @ 40mA
Supplier Device Package: Module
auf Bestellung 110 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 334.51 EUR |
| 24+ | 277.28 EUR |
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Technische Details UHB100SC12E1BC3N onsemi
Description: MOSFET 2P-CH 1200V 100A MODULE, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 P-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 417W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 5859pF @ 800V, Rds On (Max) @ Id, Vgs: 12mOhm @ 70A, 12V, Gate Charge (Qg) (Max) @ Vgs: 170nC @ 15V, Vgs(th) (Max) @ Id: 6V @ 40mA, Supplier Device Package: Module.
Weitere Produktangebote UHB100SC12E1BC3N nach Preis ab 287.97 EUR bis 402.72 EUR
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